Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth

Authors
Kessels, WMM Boogaarts, MGH Hoefnagels, JPM Schram, DC van de Sanden, MCM
Citation
Wmm. Kessels et al., Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth, J VAC SCI A, 19(3), 2001, pp. 1027-1029
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
3
Year of publication
2001
Pages
1027 - 1029
Database
ISI
SICI code
0734-2101(200105/06)19:3<1027:IOHASP>2.0.ZU;2-Y
Abstract
From cavity ring down spectroscopy and threshold ionization mass spectromet ry measurements in a remote Ar-H-2-SiH4 plasma it is clearly demonstrated t hat the properties of hydrogenated amorphous silicon (a-Si:H) strongly impr ove with increasing contribution of SiH3 to film growth. The measurements c orroborate the proposed dissociation reactions of SiH4 for different plasma settings and it is shown that film growth is by far dominated by SiH3 unde r conditions for which solar grade quality a-Si:H at deposition rates up to 10 nm/s has previously been reported. (C) 2001 American Vacuum Society.