Copper silicide nanocrystals in silicon nanowires

Citation
Jf. Qi et Y. Masumoto, Copper silicide nanocrystals in silicon nanowires, MATER RES B, 36(7-8), 2001, pp. 1407-1415
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS RESEARCH BULLETIN
ISSN journal
00255408 → ACNP
Volume
36
Issue
7-8
Year of publication
2001
Pages
1407 - 1415
Database
ISI
SICI code
0025-5408(200105/06)36:7-8<1407:CSNISN>2.0.ZU;2-F
Abstract
We report the formation of a new type of nanosized composite of copper sili cide nanocrystals embedded in a silicon nanowire that obtained by laser abl ation of Si/metal mixture targets at 1200 degreesC in an argon gas flow. Li ke the bulk phase of crystal silicon, the copper atoms were found have a hi gh solubility in the silicon nanowires and precipitate in the nanowires, Th e silicon wires are smooth in surfaces and straight in length, while the co pper silicide nanocrystals are sphere-shaped. The diameters of the nanocrys tals increase with that of the host nanowire, Because of Si nanowires and c opper silicide nanocrystals have distinctive electronic and optical propert ies, the composite nanowires may possess unique properties arising from bot h the size and the interface effects that are of fundamental and applicatio n interests. (C) 2001 Elsevier Science Ltd, All rights reserved.