Preparation of PZT thick films by one-step firing sol-gel process

Citation
Xh. Pu et al., Preparation of PZT thick films by one-step firing sol-gel process, MATER RES B, 36(7-8), 2001, pp. 1471-1478
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS RESEARCH BULLETIN
ISSN journal
00255408 → ACNP
Volume
36
Issue
7-8
Year of publication
2001
Pages
1471 - 1478
Database
ISI
SICI code
0025-5408(200105/06)36:7-8<1471:POPTFB>2.0.ZU;2-D
Abstract
A one step firing process was used in preparing PZT(53/47) thick films to p revent the film cracking. Films with a single layer thickness over 0.6 mum have been prepared. XRD and SEM studies were carried out to verify the crys tal growth mechanism in the firing process. The microstructures, crystallin ity, ferroelectric and dielectric properties of the films were compared wit h those of the films prepared by the conventional sol-gel firing process. T he influences of lead excess and film thickness on the film properties were also studied. (C) 2001 Elsevier Science Ltd. All rights reserved.