A one step firing process was used in preparing PZT(53/47) thick films to p
revent the film cracking. Films with a single layer thickness over 0.6 mum
have been prepared. XRD and SEM studies were carried out to verify the crys
tal growth mechanism in the firing process. The microstructures, crystallin
ity, ferroelectric and dielectric properties of the films were compared wit
h those of the films prepared by the conventional sol-gel firing process. T
he influences of lead excess and film thickness on the film properties were
also studied. (C) 2001 Elsevier Science Ltd. All rights reserved.