High-aspect-ratio, molded microstructures with electrical isolation and embedded interconnects

Citation
L. Muller et al., High-aspect-ratio, molded microstructures with electrical isolation and embedded interconnects, MICROSYST T, 7(2), 2001, pp. 47-54
Citations number
18
Categorie Soggetti
Instrumentation & Measurement
Journal title
MICROSYSTEM TECHNOLOGIES
ISSN journal
09467076 → ACNP
Volume
7
Issue
2
Year of publication
2001
Pages
47 - 54
Database
ISI
SICI code
0946-7076(200105)7:2<47:HMMWEI>2.0.ZU;2-#
Abstract
A thin film molding process was developed to enable the fabrication of mono lithic micromechanical structures with built-in electrical isolation and em bedded interconnects. High-aspect-ratio composite structures were created f rom undoped polysilicon, low stress nitride and doped polysilicon, in a dua l micromolding process. These monolithic electro-mechanical microstructures are more resistant to thermal effects and misalignment errors compared to microsystems assembled from discrete elements. In addition, the microstruct ures are molded in a re-usable mold providing an economical advantage. A gi mballed electrostatic microactuator was successfully fabricated using this process. Electrical isolation was achieved with a combination of low stress nitride and undoped polycrystalline silicon. Various isolation geometries were investigated. Current leakages of less than 1 nA at 30 V were measured for isolation structures 40 mum long and 80 mum tall.