The fabrication of X-ray masks is a critical and challenging process in LIG
A technique. As inductively coupled plasma (ICP) deepetching appears to be
the most suitable source for deep silicon etching, we fabricated a new type
X-ray mask using this technique. In comparison with other types of X-ray m
asks, the mask we fabricated has the advantages of its low cost and its sim
ple fabrication process. Desired microstructures have also been fabricated
using this new type X-ray mask in LIGA technique.