Authors
Borer, K
Janos, S
Li, Z
Dezillie, B
Da Via, C
Granata, V
Casagrande, L
de Boer, RWI
Lourenco, C
Niinikoski, TO
Palmieri, VG
Chapuy, S
Dimcovski, Z
Grigoriev, E
Bell, W
Devine, SRH
Ruggiero, G
O'Shea, V
Smith, K
Berglund, P
de Boer, W
Hauler, F
Heising, S
Jungermann, L
Abreu, M
Rato, P
Sousa, P
Cindro, V
Mikuz, M
Zavrtanik, M
Esposito, A
Paul, S
Buontempo, S
D'Ambrosio, N
Pagano, S
Eremin, V
Verbitskaya, E
Citation
K. Borer et al., Charge collection efficiency of an irradiated cryogenic double-p silicon detector, NUCL INST A, 462(3), 2001, pp. 474-483
Citations number
13
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002
→ ACNP
Volume
462
Issue
3
Year of publication
2001
Pages
474 - 483
Database
ISI
SICI code
0168-9002(20010421)462:3<474:CCEOAI>2.0.ZU;2-C
Abstract
We present results on the measurement of the charge collection efficiency o
f a p(+) /n/p(+) silicon detector irradiated to 1 x 10(15) n/cm(2), Operate
d in the temperature range between 80 and 200 K. For comparison, measuremen
ts obtained with a standard silicon diode (p(+) /n/n(+)), irradiated to the
same fluence, are also presented. Both detectors show a dramatic increase
of the CCE when operated at temperatures around 130 K. The double-p detecto
r shows a higher CCE regardless of the applied bias and temperature, beside
s being symmetric with respect to the polarity of the bias voltage.