A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers

A new approach to the surface photovoltage method is demonstrated on thick undoped microcrystalline silicon films grown on different substrates. The m odel, which includes top as well as bottom space-charge regions, gives a go od picture of rather complex experiments and allows good fitting of theoret ical curves to experimental results. This method gives us not only the diff usion length of minority carriers but also information on the existence and properties of the space-charge regions in the sample and the results are v erified by comparison with the standard procedure.