Numerical study of the localization-delocalization transition for vibrations in amorphous silicon

Citation
W. Garber et al., Numerical study of the localization-delocalization transition for vibrations in amorphous silicon, PHIL MAG L, 81(6), 2001, pp. 433-439
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE LETTERS
ISSN journal
09500839 → ACNP
Volume
81
Issue
6
Year of publication
2001
Pages
433 - 439
Database
ISI
SICI code
0950-0839(200106)81:6<433:NSOTLT>2.0.ZU;2-I
Abstract
Numerical studies of amorphous Si in harmonic approximation show that the h ighest 3.5% of vibrational normal modes are localized. As the vibrational f requency increases through the boundary separating localized from delocaliz ed modes, near omega (c)=70 meV (the 'mobility edge') there is a localizati on-delocalization transition, similar to a second-order thermodynamic phase transition. By a numerical study on a system with 4096 atoms, we are able to see exponential decay lengths of exact vibrational eigenstates and to te st whether or not these diverge at omega (c). Results are consistent with a localization length xi which diverges above omega (c) as (omega - omega (c ))(-p) where the exponent is p approximate to 1.3 +/- 0.5. Below the mobili ty edge we find no evidence for a diverging correlation length. Such an asy mmetry would contradict scaling ideas, and we suppose it is a finite-size a rtefact. If the scaling regime is narrower than our (approximately 1 meV) r esolution, then it cannot be seen directly on our finite system.