We find that an InAs/GaSb based electron-hole system exhibits insulating be
haviour when the numbers of occupied electron and hole Landau levels are eq
ual. In this insulating state, the Hall resistance becomes symmetric under
field reversal, and both the Hall and longitudinal resistances display repr
oducible fluctuations. We propose a simple model based on edge states to ac
count for these properties, and show that a comparison to the conductivity
measured from a Corbino disc is consistent with the model. (C) 2001 Elsevie
r Science B.V. All rights reserved.