Edge effects in an insulating state of an electron-hole system in magneticfield

Citation
K. Takashina et al., Edge effects in an insulating state of an electron-hole system in magneticfield, PHYSICA B, 298(1-4), 2001, pp. 28-32
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
298
Issue
1-4
Year of publication
2001
Pages
28 - 32
Database
ISI
SICI code
0921-4526(200104)298:1-4<28:EEIAIS>2.0.ZU;2-6
Abstract
We find that an InAs/GaSb based electron-hole system exhibits insulating be haviour when the numbers of occupied electron and hole Landau levels are eq ual. In this insulating state, the Hall resistance becomes symmetric under field reversal, and both the Hall and longitudinal resistances display repr oducible fluctuations. We propose a simple model based on edge states to ac count for these properties, and show that a comparison to the conductivity measured from a Corbino disc is consistent with the model. (C) 2001 Elsevie r Science B.V. All rights reserved.