The influence of accepters on cyclotron resonance in high electronic density 2DEG

The results of the study of cyclotron resonance on a series of high electro nic density 2DEG in GaAs/AlAs single quantum well are presented, The sample s contain different amount of accepters in the well. We observe clear oscil lations of the CR line width with the filling factor. This effect is accomp anied by a periodical modulation of the CR peak energy. We simulated the tr ansmission of the whole structure using a multi-layer dielectric model. Thi s model allows us to determine the correct values of the relaxation frequen cy and its variation with magnetic field. The oscillations of the CR line w idth and of the CR peak energy are explained within the theory of the memor y function. (C) 2001 Elsevier Science B.V. All rights reseved.