Magneto-photoluminescence of Tamm states in InP/In0.53Ga0.47As superlattices

Authors
Henriques, AB Oliveira, RF Souza, PL Yavich, B
Citation
Ab. Henriques et al., Magneto-photoluminescence of Tamm states in InP/In0.53Ga0.47As superlattices, PHYSICA B, 298(1-4), 2001, pp. 320-323
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
298
Issue
1-4
Year of publication
2001
Pages
320 - 323
Database
ISI
SICI code
0921-4526(200104)298:1-4<320:MOTSII>2.0.ZU;2-7
Abstract
The photoluminescence (PL) of InP/In0.53Ga0.47 As superlattices doped with Si in the inner barriers was studied. In magnetic fields 0-18 T applied par allel to the growth direction the PL develops a Landau level structure. An analysis of the Landau level fan diagram leads us to the conclusion that th e luminescence observed is due to transitions between electronic and hole s tates whose envelope wave functions are fully localized in the wells at the boundary of the superlattice (Tamm states). (C) 2001 Elsevier Science B.V. All rights reserved.