Excitons bound on nitrogen-related centers in p-type ZnSe : epilayers

Excitons bound to nitrogen-related defects of a ZnSe:N epilayer have been i nvestigated by means of photoluminescence experiments in high magnetic fiel ds at liquid Helium temperature. We have focused on the respective intensit ites of the bound exciton and donor-acceptor pair transitions as a function of the doping concentration, the excitation density and the magnetic field . Similar dependences on these three parameters have been observed, emphasi zing the influence of the concentration of neutral impurities. Considering the relaxation and recombination rates in these systems, we set a qualitati ve model consistent with the observed tendencies. (C) 2001 Elsevier Science B.V. All rights reserved.