Transport anisotropies in a Si/SiGe heterostructure induced by an in-planemagnetic field

Authors
Zeitler, U Schumacher, HW Haug, RJ Jansen, AGM
Citation
U. Zeitler et al., Transport anisotropies in a Si/SiGe heterostructure induced by an in-planemagnetic field, PHYSICA B, 298(1-4), 2001, pp. 501-504
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
298
Issue
1-4
Year of publication
2001
Pages
501 - 504
Database
ISI
SICI code
0921-4526(200104)298:1-4<501:TAIASH>2.0.ZU;2-T
Abstract
We have observed strong transport anisotropies in magneto-transport experim ents in the two-dimensional electron system of a SiGe heterostructure. Thes e effects occur in tilted magnetic fields where two neighboring Landau leve ls with opposite spin are close to half filling. We propose that the observ ed anisotropies may be due to the formation of a unidirectional stripe phas e formed by two energetically coinciding Landau levels. (C) 2001 Elsevier S cience B.V. All rights reserved.