Epitaxial growth of YBa2Cu3Ox film on single-domain YBCO substrate for rf component development

In our previous experiments we have developed a high quality single-domain YBCO for rf component development. The material exhibits excellent physical properties including extremely sharp T-c's, well-controlled crystal orient ation, and low surface resistance, R-s. However, the surface resistance can be further reduced if the surface of the single domain can be modified. As the major rf losses may arise from the dissipation at the 211 particles, w e have developed a new method to "cover" the 211 particles by depositing a YBCO thin film on the polished single-domain surface. In this method, the s ingle-domain YBCO serves as a substrate that has a perfect lattice matching with the YBCO film. We report the experimental results on the film synthes is and discuss the film growth mechanism on the YBCO single-domain substrat e. (C) 2001 Elsevier Science B.V. All rights reserved.