PHASE-EQUILIBRIA AT 1000-DEGREES-C IN THE AL-C-SI-TI QUATERNARY SYSTEM - AN EXPERIMENTAL APPROACH

Citation
Jc. Viala et al., PHASE-EQUILIBRIA AT 1000-DEGREES-C IN THE AL-C-SI-TI QUATERNARY SYSTEM - AN EXPERIMENTAL APPROACH, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 229(1-2), 1997, pp. 95-113
Citations number
35
Categorie Soggetti
Material Science
ISSN journal
09215093
Volume
229
Issue
1-2
Year of publication
1997
Pages
95 - 113
Database
ISI
SICI code
0921-5093(1997)229:1-2<95:PA1ITA>2.0.ZU;2-F
Abstract
More than 50 powder mixtures with different compositions in the Al-C-S i-Ti quaternary system were cold-pressed, heated for 400 h at 1000 deg rees C under 10(5) Pa argon (1 atm) and rapidly cooled. Phases present in the as-treated samples were characterized by X-ray diffraction, op tical metallography, scanning electron microscopy and electron probe m icroanalysis. From the results obtained, a three-dimensional isobaric- isothermal section of the Al-C-Si-Ti phase diagram has been constructe d, using the classical equilateral tetrahedron representation. Differe nt two-dimensional sections through this tetrahedron and projections o n its faces have also been drawn. These constructions are discussed wi th the aim to provide a comprehensive description of the phase equilib ria that tend to be established in the Al-C-Si-Ti quaternary system at 1000 degrees C under a pressure of 1 arm. Among the most important re sults, one can mention the existence of liquid-solid phase equilibria between Al-Si base liquids and each of the solid phases Ti5Si3Cx, Ti3S iC2 and TiC. The Si contents of the Al-Si base conjugate liquids are, respectively, within the limits 8-10.5 at.%, 1-19 at.% and 0-11.5 at.% . Moreover, it is worth noting that Ti5Si3Cx conjugates with all the s olid compounds of the system (Al4C3 and SiC excepted) and that the thr ee-dimensional isobaric-isothermal section is separated into two disti nct parts by a three-phase equilibrium Ti5Si3Cx-Al3Ti-TiC. The discuss ion also deals with the thermodynamic aspect of the high-temperature c hemical interaction between silicon carbide SiC and Ti-Al alloys. (C) 1997 Elsevier Science S.A.