The electron spin resonance (ESR) of two-dimensional electrons (2DE) in Si/
SiGe shows in addition to the absorption signal two types of indirect signa
ls: a dispersion signal which reflects the frequency dependence of the elec
trical conductivity and a polarization signal which originates from the dep
endence of electric conductivity on the spin polarization of the 2DE. The o
ccurrence of the polarization signal together with the dependencies of ESR
on the direction of external magnetic field and on the electron concentrati
on indicate that many body e(-)-e(-) correlation in the high mobility 2DE g
as constitutes a specific phase very different from a 2D classical metal. (
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