Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs

Citation
Sd. Ganichev et al., Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs, PHYSICA E, 10(1-3), 2001, pp. 52-56
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
13869477 → ACNP
Volume
10
Issue
1-3
Year of publication
2001
Pages
52 - 56
Database
ISI
SICI code
1386-9477(200105)10:1-3<52:NPEIBM>2.0.ZU;2-R
Abstract
We report on the first observation of the circular photogalvanic effect (CP CE) induced by optical monopolar spin orientation of holes in p-doped quant um-well structures. It is shown that monopolar optical spin orientation of free carriers causes an electric current which reverses its direction upon changing from left to right circularly polarized radiation, The effect has been observed in (0 0 1)- and (3 1 1)A-oriented p-GaAs/AlGaAs quantum wells at normal incidence of far -infrared radiation. The photocurrent is propor tional to the light intensity at low power levels and gradually saturates w ith increasing intensity. The CPGE can be utilized to investigate separatel y spin polarization of electrons and holes and to determine spin-relaxation times. (C) 2001 Elsevier Science B.V. All rights reserved.