The spin properties of the 2DES in AlGaAs/GaAs heterostructures are studied
via the electron spin resonance (ESR) of conduction electrons and via the
temperature dependence of the DC-sigma (xx)(B) conductivity component. The
ESR is investigated at integer (v = 1) and fractional filling factors (v <
1) via the change DeltaR(xx) of the magnetoresistance in high- and low-mobi
lity samples. The DC-sigma (xx)(B) peaks in the integer quantum Hall effect
regime show scaling behaviour. The peak widths obey power laws with expone
nts of about 0.4 (strong spin splitting) and 0.2 (no spin splitting, one cr
itical energy in the Landau level centre). By assuming two critical energie
s in the latter case we obtain exponents close to 0.4. (C) 2001 Elsevier Sc
ience B.V. All rights reserved.