Spin-dependent electronic noise

The influence of electron spin resonance on generation-recombination noise is studied. In nin-photoconductors made from amorphous hydrogenated silicon (a-Si:H), a resonant decrease of the noise power density is observed. Both the sign of the noise-detected magnetic resonance (NDMR) signal as well as the frequency dependence of the signal amplitude can be described by a res onant reduction of the characteristic generation-recombination time constan t. The y-factor observed identifies hopping in the valence band as the domi nant spin-dependent transport process leading to electronic noise in this m aterial. (C) 2001 Elsevier Science B.V. All rights reserved.