An investigation of tunable spin-orbit interactions in front-gated In0.75Ga0.25As/In0.75Al0.25As heterojunctions

Authors
Sato, Y Gozu, S Kita, T Yamada, S
Citation
Y. Sato et al., An investigation of tunable spin-orbit interactions in front-gated In0.75Ga0.25As/In0.75Al0.25As heterojunctions, PHYSICA E, 10(1-3), 2001, pp. 77-80
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
13869477 → ACNP
Volume
10
Issue
1-3
Year of publication
2001
Pages
77 - 80
Database
ISI
SICI code
1386-9477(200105)10:1-3<77:AIOTSI>2.0.ZU;2-2
Abstract
We investigated zero-field spin-splitting in normal-type In0.75Ga0.25As/In0 .75Al0.25As heterostructure by magnetoresistance measurements at 1.5 K. The maximum value of spin-orbit interaction parameter, alpha (zero) obtained h ere is 32x10(-12) eVm. We also confirmed a tuning of alpha (zero) by applyi ng gate biases. On the other hand, we observed no beat oscillation when the In0.75Ga0.25As well width decreased from 30 to 10nm. These results suggest ed that interface contribution related to the asymmetry of wave function pe netration into the barriers could be enhanced in our heterojunction (C) 200 1 Published by Elsevier Science B.V.