Theoretical and experimental considerations on the spin field effect transistor

We propose a study of the spin field effect transistor (spin-FET). as a str ucture for the investigation of the physics of spin polarized transport in ferromagnet/semiconductor structures and as a device For fast electronics. From Monte Carlo simulation of spin-polarized transport in the channel of t his device, we develop in a first part theoretical considerations about the scaling of the spin-FET. In particular, we point out that the magnetizatio n of the ferromagnetic source contact has to be perpendicular to ferromagne t/semiconductor interface. Tn a second part, we present a study of the magn etic properties of ultrathin Co layers deposited on GaAs with the aim of ob taining a perpendicular magnetization. (C) 2001 Elsevier Science B.V. All r ights reserved.