Electronic structure of superlattices of II-VI/III-V diluted magnetic semiconductors

The superlattices of the diluted magnetic semiconductors (Al, X) (As, Y)/(C d,Mn) Te, where X and Y are Si, C and antisite Al and As, are investigated by use of KKR-CPA-LDA ( Korringa-Kohn-Rostoker coherent-potential approxima tion and the local density approximation) ab initio calculation. The superl attice whose unit cell is composed of a single AlAs layer and a single CdMn Te layer becomes a ferromagnetic when the carrier holes are increased. In t he case where the number of the CdMnTe layer in the unit cell is increased, the interlayer coupling between the CdMnTe layers is antiferromagnetic bec ause carrier holes reside only at the III-V/II-VI heterosurface. (C) 2001 E lsevier Science B.V. All rights reserved.