Ferromagnetism and spin-dependent transport in magnetic semiconductors

Authors
Inoue, J Nonoyama, S Itoh, H
Citation
J. Inoue et al., Ferromagnetism and spin-dependent transport in magnetic semiconductors, PHYSICA E, 10(1-3), 2001, pp. 170-174
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
13869477 → ACNP
Volume
10
Issue
1-3
Year of publication
2001
Pages
170 - 174
Database
ISI
SICI code
1386-9477(200105)10:1-3<170:FASTIM>2.0.ZU;2-D
Abstract
We calculate the electronic states of the Mn-doped semiconductors and show that resonant states are formed at the top of the down spin valence band du e to the magnetic impurities and that they give rise to a strong and long-r anged ferromagnetic coupling between Mn moments. These resonant states brin g about the spin-dependent resistivity to produce magnetoresistive properti es of(Ga-Mn)As and their junctions. (C) 2001 Elsevier Science B.V. All righ ts reserved.