Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs

Authors
Satoh, Y Okazawa, D Nagashima, A Yoshino, J
Citation
Y. Satoh et al., Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs, PHYSICA E, 10(1-3), 2001, pp. 196-200
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
13869477 → ACNP
Volume
10
Issue
1-3
Year of publication
2001
Pages
196 - 200
Database
ISI
SICI code
1386-9477(200105)10:1-3<196:CCDOEA>2.0.ZU;2-V
Abstract
Magnetotransport and magnetic properties of p-type GaMnAs layers, in which hole concentrations and Mn concentrations are independently controlled by S n-donor incorporation, have been studied. Negative magnetoresistance has be en enhanced by increasing Sn-incorporation. Hole concentration dependence o f ferromagnetic transition temperature, determined from residual magnetizat ion-temperature characteristic measured by DC-SQUID magnetometer has been i nvestigated. (C) 2001 Elsevier Science B.V. All rights reserved.