Effect of light illumination on the process of magnetization reversal in carrier-induced ferromagnetic semiconductors

Authors
Oiwa, A Slupinski, T Munekata, H
Citation
A. Oiwa et al., Effect of light illumination on the process of magnetization reversal in carrier-induced ferromagnetic semiconductors, PHYSICA E, 10(1-3), 2001, pp. 201-205
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
13869477 → ACNP
Volume
10
Issue
1-3
Year of publication
2001
Pages
201 - 205
Database
ISI
SICI code
1386-9477(200105)10:1-3<201:EOLIOT>2.0.ZU;2-4
Abstract
We have found the reduction in coercive force by the light illumination for carrier-induced ferromagnetic semiconductor heterostructure p-(In,Mn)As/Ga Sb grown by molecular beam epitaxy. This effect disappears when the photoge nerated holes recombine with trapped electrons. This strongly suggests that the observed phenomenon is attributed to the carrier-induced magnetism. (C ) 2001 Elsevier Science B.V. All rights reserved.