Magnetotransport properties of (Ga,Mn)As grown on GaAs(411)A substrates

Authors
Omiya, T Matsukura, F Shen, A Ohno, Y Ohno, H
Citation
T. Omiya et al., Magnetotransport properties of (Ga,Mn)As grown on GaAs(411)A substrates, PHYSICA E, 10(1-3), 2001, pp. 206-209
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
13869477 → ACNP
Volume
10
Issue
1-3
Year of publication
2001
Pages
206 - 209
Database
ISI
SICI code
1386-9477(200105)10:1-3<206:MPO(GO>2.0.ZU;2-S
Abstract
Properties of ferromagnetic (Ga,Mn)As layers grown epitaxially on a GaAs (4 1 1)A substrate were investigated. X-ray double-crystal diffraction showed the presence of shear strain due to lattice mismatch between substrate and the epitaxial layer. The magnetotransport measurements showed that the eas y axis of magnetization was in the (1 0 0) plane. The results indicate that the origin of the magnetic anisotropy is dominated by the lattice strain. (C) 2001 Elsevier Science B.V. All rights reserved.