Preparation of (Ga,Fe)As has been studied systematically by molecular beam
epitaxy for a wide range of substrate temperature T-s. It has been found th
at the physical properties of the epilayers can be classified into two diff
erent types depending on the T-s. Epitaxy at relatively low T-s ( T-s = 260
degreesC) has yielded homogeneous, paramagnetic Ga1-xFexAs epilayers, wher
eas epitaxy at higher temperatures (T-s = 350-580 degreesC) has resulted in
GaAs epilayers with ferromagnetic inclusions. The layers prepared at high
T-s have exhibited magneto-optical effect with ferromagnetic characteristic
s. (C) 2001 Elsevier Science B.V. All rights reserved.