Ferromagnetism in a transition metal atom doped ZnO

Ferromagnetism in a 3d transition metal atom doped ZnO was investigated by ab initio electronic structure calculations based on the local density appr oximation. It was shown that the anti-ferromagnetic state was stable in Mn atom doped ZnO and the ferromagnetic state was stable in the other transiti on metal, i.e., V, Cr, Fe, Co or Ni, doped ZnO, if no additional carrier do pant was introduced. Carrier induced ferromagnetism in the Mn atom doped Zn O was also investigated. The results showed that the ferromagnetism was ind uced by hole doping in the Mn atom doped ZnO. The present calculations will provide us with guidelines to produce ferromagnetic magnetic semiconductor s and to control their magnetic state. (C) 2001 Elsevier Science B.V. All r ights reserved.