The fabrication of ferromagnetic fine patterns in the a-Ge1-xMnxTc films by
using the phase change ha's been reported. Amorphous Ge1-xMnxTe films are
prepared by conventional RF sputtering method at room temperature. After de
position, amorphous films are crystallized by annealing at various temperat
ures and basic properties of both the amorphous and crystalline phases are
measured. It has been clarified that the electrical and optical properties
of the crystalline phase are widely different from those of amorphous phase
. The low-field-magnetization of an amorphous film at 4.2 K increases in pr
oportion to the applied magnetic field, that is paramagnetic. On the other
hand, hysteresis is observed in the magnetization curve of annealed film, w
hich means that the ferromagnetic fine pattern can be formed in an amorphou
s matrix by crystallization. Ferromagnetic wire patterns having 1 mum width
are successfully formed in the a-Ge1-xMnxTe film by irradiating the laser
beam. Hysteresis is observed in the magnetization curve of Ge1-xMnxTe film
having the crystalline wires and the hysteretic behavior of negative magnet
oresistance is also obtained in these patterns. (C) 2001 Elsevier Science B
.V. All rights reserved.