OMVPE growth and properties of Dy-doped III-V semiconductors

Dy doping to GaAs and InP by organometallic vapor phase epitaxy (OMVPE) has been investigated, for the first time, with two kinds of Dy sources. Secon dary ion mass spectroscopy (SIMS) measurements reveal a uniform Dy distribu tion along the growth direction. Good controllability in GaAs of Dy concent ration is achieved against a H-2 now rate through the Dy source. In 4.2 K p hotoluminescence (PL) measurements on Dy-doped GaAs, characteristic lumines cence is successfully observed at around 1.1, 1.3, 1.7 and 2.8 mum, which i s assigned to tile intra-4f shell transition of Dy3+ ions. The Dy-related P L intensity depends strongly on Dy concentration and growth conditions. In Dy-dopcd InP, weak Dy-related luminescence is also observed at around 1.3 I rm. (C) 2001 Elsevier Science B.V. All rights reserved.