Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities - art. no. 201204

A giant negative magnetoresistance has been observed in bulk germanium dope d with multiply charged deep impurities. Applying a magnetic field the resi stance may decrease exponentially at any orientation of the field. A drop o f the resistance as much as about 10 000% has been measured at 6 T. The eff ect is attributed to the spin splitting of impurity ground state with a ver y large g factor in the order of several tens depending on impurity.