Dependence of the band structure on the order parameter for partially ordered GaxIn1-xP alloys - art. no. 201312

Citation
Y. Zhang et al., Dependence of the band structure on the order parameter for partially ordered GaxIn1-xP alloys - art. no. 201312, PHYS REV B, 6320(20), 2001, pp. 1312
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6320
Issue
20
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010515)6320:20<1312:DOTBSO>2.0.ZU;2-T
Abstract
An empirical pseudopotential method is demonstrated for realistically and a ccurately calculating the band structure of partially CuPt ordered GaxIn1-x P alloys. A sufficiently large supercell of similar to 3500 atoms, with all atomic positions relaxed by applying a valence force field method, is used to simulate the (Ga,In) distribution in the partially ordered alloy with t he order parameter eta varying from 0 to 1. While agreeing very well with e xperimental data in the experimentally verifiable region eta <0.5, our resu lts illustrate that a commonly accepted interpolation scheme (i.e., the <et a>(2) rule) is grossly inaccurate for determining certain primary band stru cture parameters (e.g., the band gap) between eta =0 and eta =1.