Oxidation mechanism of LaTiO3.5 thin films - art. no. 205401

Citation
Jw. Seo et al., Oxidation mechanism of LaTiO3.5 thin films - art. no. 205401, PHYS REV B, 6320(20), 2001, pp. 5401
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6320
Issue
20
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010515)6320:20<5401:OMOLTF>2.0.ZU;2-G
Abstract
LaTiO3.5 is a layered compound made up of four LaTiO3 units: two regular pe rovskite units stacked between two distorted units that share an additional oxygen layer. In a single-crystalline thin film the (100) plane can be ali gned parallel to the substrate surface, i.e., the additional oxygen layers are inserted parallel to the substrate surface. A detailed structural chara cterization reveals planar defects originating from substrate surface steps . These results, in combination with the in situ reflection high-energy ele ctron-diffraction observations, suggest an oxidation mechanism using such a ntiphase boundaries as oxidation paths.