Localization of 3d electrons in thin Mn and Mn-oxide films by resonant photoemission - art. no. 205416

We have applied the tool of resonant photoemission at the L-3 absorption ed ge to thin Mn layers deposited on Cu(100). This allows us to study the tran sition from atomic to solid-state phase by following the 3d-band formation through the localization of a photon-excited electron in the presence of a 2p core hole. We have observed localized behavior for one of the transition s of the Mn 2p3p3d decay above the L-3 absorption threshold for coverages s maller than 0.5 ML. We show that the autoionization time of the 2p-core-hol e intermediate state is comparable to the time of localization of the photo n-excited 3d electron in the presence of the 2p core hole in the case of th e highest binding-energy transition of the 2p3p3d decay.