This paper reviews magnetotransport properties of concentrated and diluted
magnetic semiconductors, including rare earth chalcogenides, mixed valence
manganite perovskites, and the magnetically doped m-V semiconductors. The d
ependence of resistivity on state of magnetization leads in several cases t
o greater than 12 orders of magnitude decreases in resistivity near the mag
netic transition temperature. The concept of the magnetic polaron is introd
uced and offers a reasonable explanation for many of these effects. Limitat
ions of these materials as magneto-resistive sensors will be discussed. Sev
eral novel device geometries based on non-magnetic semiconductors, which ho
ld considerable promise for a wide variety of sensor applications will also
be mentioned. (C) 2001 Elsevier Science B.V. All rights reserved.