Noise measurements have been performed on a spin-valve transistor. This tra
nsistor consists of a Pt/NiFe/Au/Co/Au multilayer sandwiched between two se
miconductors. For comparison, we also studied metal base transistors with a
Pt/Au or Pt/NiFe/Au base. All samples show full shot noise in the collecto
r current. The inclusion of a spin-valve in the base layer decreases the ab
solute value of the collector current and with it the noise level but it do
es not change the nature of the noise in this device. Similarly, the collec
tor current, and therefore, the noise changes as a function of magnetic fie
ld for the spin-valve transistor, but no additional noise of magnetic origi
n is observed. (C) 2001 Elsevier Science B.V. All rights reserved.