Low-temperature annealing system for 300mm thermal processing

A production-worthy, five-wafer annealing system using six stacked hotplate s is proposed for low-temperature (100-450 degreesC) applications such as f u. Al, SOG, photoresist, and low-k dielectric annealing for 300mm wafers. T hermal properties of the annealing system and wafer temperature profiles du ring annealing are characterized as a function of hotplate temperature and annealing time under various gas ambients. SOG process results are discusse d. The productivity of the annealing system is evaluated as a function of a nnealing time.