Transport properties study of kappa-(ET)(2)Cu[N(CN)(2)]I

Authors
Yefanov, VS Tanatar, MA Ishiguro, T Ito, H Bondarenko, VA Kushch, ND Yagubskii, EB
Citation
Vs. Yefanov et al., Transport properties study of kappa-(ET)(2)Cu[N(CN)(2)]I, SYNTH METAL, 120(1-3), 2001, pp. 959-960
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
120
Issue
1-3
Year of publication
2001
Pages
959 - 960
Database
ISI
SICI code
0379-6779(20010315)120:1-3<959:TPSOK>2.0.ZU;2-K
Abstract
Formation of an insulating ground state in kappa-(ET)(2)Cu[N(CN)(2)] was st udied by measurements of the resistance and thermopower anisotropy, and of the Hall effect. Metallic state predicted by the band structure calculation is found above 230 K. Between 230 and 85 K the behavior is consistent with localization scenario within disordered metallic state. Real gap in the el ectronic spectrum is formed below 85 K. The data shows close relation betwe en the insulating state formation and the structural transitions in the sal t.