SELF-ALIGNED ALUMINUM TOP-GATE POLYSILICON THIN-FILM TRANSISTORS FABRICATED USING LASER RECRYSTALLIZATION AND GAS-IMMERSION LASER DOPING

We present electrical results from polysilicon thin-film transistors ( TFT's) fabricated using laser-recrystallized channels and gas-immersio n laser-doped source-drain regions. A simple, four-level self-aligned aluminum top-gate process is developed to demonstrate the effectivenes s of these laser processes in producing TFT's. The source-drain doping process results in source-drain sheet resistances well below 100 Omeg a/square. TFT held-effect mobilities in excess of 200 cm(2)/Vs are mea sured for the laser-fabricated unhydrogenated TFT's.