Crystal growth of GaPO4, a very promising material for manufacturing BAW devices

GaPO4 crystals were obtained by hydrothermal solution crystal growth. The r etrograd solubility of the material was investigated in different solvents. In static growth vessels, good quality crystals can be obtained only if th e solute supply is higher than about 0.06M/L. Crystal characterization by i nfrared spectroscopy showed that dilute solvents at high temperature decrea se the "-OH"group content. Seed lengthening by splicing along the Y-axis wa s designed. The AT cut angle and the C-44 elastic constant were determined. Compared to quartz-type materials, the C-0/C-1 calculation shows the high ability of GaPO4 for manufacturing BAW devices.