High temperature microbalances based on GaPO4

Citation
H. Thanner et al., High temperature microbalances based on GaPO4, ANN CHIM-SC, 26(1), 2001, pp. 161-164
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
ANNALES DE CHIMIE-SCIENCE DES MATERIAUX
ISSN journal
01519107 → ACNP
Volume
26
Issue
1
Year of publication
2001
Pages
161 - 164
Database
ISI
SICI code
0151-9107(200101/02)26:1<161:HTMBOG>2.0.ZU;2-#
Abstract
Two different microbalance applications, based on temperature compensated t hickness shear mode resonators (single rotated Y-cuts), were studied. In th e first case, the film thickness growth during the sputter process was moni tored. The measured frequency shift was in excellent agreement with the app lied theory. In the second case, the selfcleaning by heating the crystal up to 650 degreesC after contamination with particulates was demonstrated.