Structural and electrical characteristics of epitaxial GaN thin films grown using pulsed laser deposition assisted by an atomic nitrogen source

Citation
P. Merel et al., Structural and electrical characteristics of epitaxial GaN thin films grown using pulsed laser deposition assisted by an atomic nitrogen source, APPL SURF S, 177(3), 2001, pp. 165-171
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
177
Issue
3
Year of publication
2001
Pages
165 - 171
Database
ISI
SICI code
0169-4332(20010608)177:3<165:SAECOE>2.0.ZU;2-P
Abstract
A deposition system combining pulsed laser deposition (PLD, cooled Ga targe t) and a source of atomic nitrogen was developed to grow epitaxial gallium nitride on sapphire. The layers obtained with this system were characterize d using high-resolution X-ray diffraction, atomic force microscopy (AFM), H all effect, and secondary ion mass spectroscopy (SIMS). It is found that th e crystal quality greatly depends on the atomic nitrogen flux incident on t he substrate during growth. After optimization of the atomic nitrogen-to-ga llium flux ratio, samples showing very narrow GaN(0 0 0 2) rocking curves ( full width at half maximum. FWHM = 80 arcsec) have been synthesized at a lo w substrate temperature (T-s = 750 degreesC). Surface analysis of these thi n films, using AFM, also show a very low roughness (R-rms = 14 Angstrom). ( C) 2001 Published by Elsevier Science B.V.