Properties of HgCdTe films obtained by laser deposition on a sapphire

Films of HgCdTe have been obtained by pulsed laser deposition (PLD) using: Nd:YAG pulse laser (40 ns. 1 J/pulse. lambda = 1.06 mum) and XeCl excimer l aser (25 ns, 150 ml/pulse, lambda = 0.308 mum) Layers were deposited on mon ocrystalline and amorphous surfaces of Al2O3. Samples were obtained when th e substrate temperature was 300 and 500 K. Monocrystalline Hg1-xCdxTe (x = 0.2) were used as a target. A thickness of layers obtained was in the range of 0.05-0.5 mum. depending on a type of laser used and on a number of shot s. Surface morphology was investigated by electron scanning microscopy. The chemical composition of layers was determined by X-ray micro-analysts. The samples obtained were of good homogeneity and they reflected well the comp osition of the target. The structural properties of the samples were compar ed with results of the electrophysical measurements. (C) 2001 Elsevier Scie nce B,V. All rights reserved.