ZnS thin films grown on Si(100) by XeCl pulsed laser ablation

Authors
Hillie, KT Curren, C Swart, HC
Citation
Kt. Hillie et al., ZnS thin films grown on Si(100) by XeCl pulsed laser ablation, APPL SURF S, 177(1-2), 2001, pp. 73-77
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
177
Issue
1-2
Year of publication
2001
Pages
73 - 77
Database
ISI
SICI code
0169-4332(20010601)177:1-2<73:ZTFGOS>2.0.ZU;2-O
Abstract
The growth of ZnS based phosphor thin films on a Si(100) substrate using pu lsed XeCl (308 nm) laser deposition (PLD) for cathodoluminescene (CL) studi es was investigated. Ultra high vacuum Auger electron spectroscopy (AES) wa s utilised to determine the surface composition of the thin films. X-ray di ffraction (XRD) measurements revealed that (100) ZnS films have been prefer entially grown on a Si(100) substrate. The Rutherford back scattering (RBS) results show that the growth rate, increased with an increase of the N-2 p ressure in the deposition chamber during deposition. (C) 2001 Elsevier Scie nce B.V. All rights reserved.