Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy

Authors
Srnanek, R Kinder, R Sciana, B Radziewicz, D McPhail, DS Littlewood, SD Novotny, I
Citation
R. Srnanek et al., Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy, APPL SURF S, 177(1-2), 2001, pp. 139-145
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
177
Issue
1-2
Year of publication
2001
Pages
139 - 145
Database
ISI
SICI code
0169-4332(20010601)177:1-2<139:DODPOB>2.0.ZU;2-L
Abstract
A method for determination of doping concentration profiles of GaAs multila yer structures on a bevelled surface by Raman spectroscopy is presented. By scanning the laser beam along the bevel we obtained micro-Raman spectra in different depth positions in the structure. Calculated I-TO/I-LO intensiti es determine the doping concentration in these points for values above 3 x 10(16) cm(-3). The results are compared with electrochemical capacitance-vo ltage technique and secondary ion mass spectrometry, Some specific problems are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.