beta-FeSi2-base MIS diodes fabricated by sputtering method

Authors
Ehara, T Sasaki, Y Saito, K Nakagomi, S Kokubun, Y
Citation
T. Ehara et al., beta-FeSi2-base MIS diodes fabricated by sputtering method, APPL SURF S, 175, 2001, pp. 96-100
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
175
Year of publication
2001
Pages
96 - 100
Database
ISI
SICI code
0169-4332(20010515)175:<96:BMDFBS>2.0.ZU;2-1
Abstract
In this paper, fabrication of beta-ironsilicide (beta -FeSi2)-base metal-in sulator-semiconductor diode devices is described. beta -FeSi2 films have be en prepared by co-sputtering of Fe and Si followed by thermal annealing. Th e [2 0 2] X-ray diffraction peak of beta -FeSi2 was observed at 2 theta = 2 9 degrees when both the Fe-Si chemical composition and annealing temperatur e were optimized. The prepared beta -FeSi2 films have been thermally oxidiz ed in an O-2 gas atmosphere. Using the techniques above, we fabricated A1/o xidized-FeSi2/beta -FeSi2/p-Si structured devices, which displayed diode pr operties. (C) 2001 Elsevier Science B.V. All rights reserved.