Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO2 and SnO2

Authors
Tarre, A Rosental, A Sammelselg, V Uustare, T
Citation
A. Tarre et al., Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO2 and SnO2, APPL SURF S, 175, 2001, pp. 111-116
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
175
Year of publication
2001
Pages
111 - 116
Database
ISI
SICI code
0169-4332(20010515)175:<111:CSOLCA>2.0.ZU;2-6
Abstract
Peculiarities of the atomic-layer chemical vapor deposition growth of TiO2 and SnO2 thin films from chlorides and water at low (less than or equal to 300 degreesC) temperatures are in situ monitored on a submonolayer scale by incremental dielectric reflection. RHEED, AES, EPMA, SFM, and UV-VIS spect rophotometry are used for the ex situ characterization of the growth. It is shown that the main peculiarity of the TiO2 growth exhibits itself in the spontaneous crystallization at the very beginning of the deposition while t he peculiarity of the SnO2 growth is connected with a low reactivity of wat er. (C) 2001 Elsevier Science B.V. All rights reserved.