Kinetic surface structuring during homoepitaxy of GaAs(110): a model study

Authors
Videcoq, A Vladimirova, M Pimpinelli, A
Citation
A. Videcoq et al., Kinetic surface structuring during homoepitaxy of GaAs(110): a model study, APPL SURF S, 175, 2001, pp. 140-145
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
175
Year of publication
2001
Pages
140 - 145
Database
ISI
SICI code
0169-4332(20010515)175:<140:KSSDHO>2.0.ZU;2-0
Abstract
We propose and study analytically and by kinetic Monte Carlo simulations a simple model for the homoepitaxial growth of GaAs on vicinals of GaAs (1 1 0). Our model displays a step bunching-step meandering transition that qual itatively reproduces the behavior observed experimentally, as well as more complex self-organized patterning where bunching and meandering appear simu ltaneously. (C) 2001 Elsevier Science B.V. All rights reserved.