Nature of the root 3 alpha to 3 x 3 reversible phase transition at low temperature in Sn/Ge (111)

Metal-induced superstructures on semiconductors at sub-monolayer coverages have been mostly studied at, or above, room temperature. Yet, recently, sev eral reversible phase transitions, like, e.g. the root3 x root3 alpha to 3 x 3 transition in the Pb, Sn/Ge (111) prototypical systems, have been disco vered below RT. The origin of these new reconstructions is very intriguing and is a matter of strong debate. Some groups privilege electronic instabil ities leading to charge ordered states at low temperature (LT), while other favor dynamical effects and the formation a kind of bond density waves (BD W's) at LT. Besides these intrinsic behaviors, the role played by inevitabl e defects has also been emphasized by several authors. Focussing especially on the Sn/Ge (111) system, we present a detailed analysis of the spectrosc opic signatures of each phase in photoemission measurements. We show that s tatic models are impossible to reconcile with these measurements. (C) 2001 Elsevier Science B.V. All rights reserved.