We present the results of surface investigations of novel heteroepitaxial m
etallic low-dimensional structures fabricated on the basis of high-quality
single-crystalline refractory-metal films (W(1 0 0) with thickness of 30-20
00 Angstrom on r-plane sapphire). Films were grown by laser ablation deposi
tion technique. Procedure consisting of soft ion bombardment and annealing
at 1200-1300 K in UHV allowed to obtain atomically clean (1 0 0) film surfa
ce (without oxygen and carbon contamination) with four-fold symmetry LEED p
attern typical for refractory metals. Study of atomic and electronic struct
ures and composition of the film surface was performed by LEED, AES, and UP
S techniques. UPS spectra of these low-dimensional metallic systems are pre
sented and compared with electronic structure of bulk single crystals. (C)
2001 Elsevier Science B.V. All rights reserved.